F3F90HVX2 Specs and Replacement
Type Designator: F3F90HVX2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 67 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
Package: TO-220F
F3F90HVX2 substitution
- MOSFET ⓘ Cross-Reference Search
F3F90HVX2 datasheet
f3f90hvx2.pdf
SHINDENGEN N- NEDI MENSI ONS OUTLI 2SK2666 Case FTO-220 Unit mm F3F90HVX 900V 3A (Ciss) ... See More ⇒
Detailed specifications: F20W50VX2, F20W60C3, F21F60CPM, F24W60C3, F25F60CPM, F31W60CP, F35W60C3, F39W60CP, RFP50N06, F3S90HVX2, F3V50VX2, F3V90HVX2, F47W60C3, F4F60VX2, F5018-S, F5020-S, F5041
Keywords - F3F90HVX2 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: RD3H080SP
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