F3S90HVX2 Specs and Replacement
Type Designator: F3S90HVX2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 67 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
Package: STO-220
F3S90HVX2 substitution
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F3S90HVX2 datasheet
2sk2665 f3s90hvx2.pdf
SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2665 Case STO-220 (Unit mm) ( F3S90HVX2 ) 900V 3A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply... See More ⇒
Detailed specifications: F20W60C3, F21F60CPM, F24W60C3, F25F60CPM, F31W60CP, F35W60C3, F39W60CP, F3F90HVX2, SI2302, F3V50VX2, F3V90HVX2, F47W60C3, F4F60VX2, F5018-S, F5020-S, F5041, F5042
Keywords - F3S90HVX2 MOSFET specs
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History: AO9926B
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