F3S90HVX2 Datasheet and Replacement
Type Designator: F3S90HVX2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 67 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.7 Ohm
Package: STO-220
F3S90HVX2 substitution
F3S90HVX2 Datasheet (PDF)
2sk2665 f3s90hvx2.pdf

SHINDENGENHVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2665Case : STO-220(Unit : mm)( F3S90HVX2 )900V 3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed.APPLICATION Switching power supply
Datasheet: F20W60C3 , F21F60CPM , F24W60C3 , F25F60CPM , F31W60CP , F35W60C3 , F39W60CP , F3F90HVX2 , 2N60 , F3V50VX2 , F3V90HVX2 , F47W60C3 , F4F60VX2 , F5018-S , F5020-S , F5041 , F5042 .
History: SM6018NSU
Keywords - F3S90HVX2 MOSFET datasheet
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History: SM6018NSU



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