All MOSFET. F5018-S Datasheet

 

F5018-S Datasheet and Replacement


   Type Designator: F5018-S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 7 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO-252
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F5018-S Datasheet (PDF)

 ..1. Size:670K  fuji
 f5018-s.pdf pdf_icon

F5018-S

 9.1. Size:40K  fuji
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F5018-S

MOSFET / Pwer MOSFETs MOSFET Pwer MOSFET F TI F T VDSS ID ID (pulse) RDS (on) PD VGSS VGS (th) Device type Max. Typ. Package Net massVolts Amps. Amps. Ohms () Watts Volts Volts GramsF5018 40 8 - 0.14 15 - - K-pack 0.6F5019 40 12 - 0.14 30 - - T-pack 1.6F5020 40 3

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History: WSP4067B | STD5NM60 | BUK9M7R2-40E | ME75N03-G | LSD65R280HT | PHP79NQ08LT | SIHFRC20

Keywords - F5018-S MOSFET datasheet

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