All MOSFET. F55NF06 Datasheet

 

F55NF06 Datasheet and Replacement


   Type Designator: F55NF06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO-220F
 

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F55NF06 Datasheet (PDF)

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F55NF06

55NF06Pb55NF06Pb Free Plating ProductN-CHANNEL POWER MOSFET TRANSISTOR50 AMPERE 60 VOLTN-CHANNEL POWER MOSFET12TO-251/IPAK3 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max 12threshold voltages of 4 volt. TO-

Datasheet: F5020-S , F5041 , F5042 , F5042-S , F5043 , F5043-S , F5048 , F5055 , IRFZ48N , F5F50VX2 , F5F90HVX2 , F5S90HVX2 , F5V50 , F5V90HVX2 , F60W60CP , F6B52HP , F6F70HVX2 .

History: SIA911ADJ | FMP16N60ES | SVD50N06T | OSG60R150KF | STU3N62K3 | RSD140P06FRA | DH028N03

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