F55NF06 PDF and Equivalents Search

 

F55NF06 Specs and Replacement

Type Designator: F55NF06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO-220F

F55NF06 substitution

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F55NF06 datasheet

 ..1. Size:279K  thinkisemi
 d55nf06 f55nf06 p55nf06 u55nf06.pdf pdf_icon

F55NF06

55NF06 Pb 55NF06 Pb Free Plating Product N-CHANNEL POWER MOSFET TRANSISTOR 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET 1 2 TO-251/IPAK 3 DESCRIPTION Thinkisemi 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max 12 threshold voltages of 4 volt. TO-... See More ⇒

Detailed specifications: F5020-S, F5041, F5042, F5042-S, F5043, F5043-S, F5048, F5055, STP65NF06, F5F50VX2, F5F90HVX2, F5S90HVX2, F5V50, F5V90HVX2, F60W60CP, F6B52HP, F6F70HVX2

Keywords - F55NF06 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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