FA57SA50LCP Datasheet and Replacement
Type Designator: FA57SA50LCP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 57 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 152 nS
Cossⓘ - Output Capacitance: 1500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOT-227
FA57SA50LCP substitution
FA57SA50LCP Datasheet (PDF)
fa57sa50lcp.pdf

FA57SA50LCPwww.vishay.comVishay SemiconductorsPower MOSFET, 57 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance Designed for industrial level UL approve
fa57sa50lc.pdf

PD - 91650AFA57SA50LCHEXFET Power MOSFET Fully Isolated PackageD Easy to Use and ParallelVDSS = 500V Low On-Resistance Dynamic dv/dt RatingRDS(on) = 0.08 Fully Avalanche RatedG Simple Drive RequirementsID = 57A Low Gate Charge DeviceS Low Drain to Case Capacitance Low Internal InductanceDescriptionThird Generation HEXFETs from International Rectifier
fa57sa50.pdf

FA57SA50LCPVishay SemiconductorsPower MOSFET, 57 AFEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge deviceSOT-227 Low drain to case capacitance Low internal inductance UL pending Compliant to RoHS directive 2002/95/EC D
Datasheet: F5V50 , F5V90HVX2 , F60W60CP , F6B52HP , F6F70HVX2 , F7F60C3M , F7W90HVX2 , FA38SA50LCP , MMD60R360PRH , FC40SA50FKP , FC4A22050L , FC4B21080L , FC4B21300L , FC4B21320L , FC4B22070L , FC4B22180L , FC551601 .
History: CS12N60A8R | BL8N100-F | PE552BA | PA110BD | AO2301 | PT530BA | STD4N62K3
Keywords - FA57SA50LCP MOSFET datasheet
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History: CS12N60A8R | BL8N100-F | PE552BA | PA110BD | AO2301 | PT530BA | STD4N62K3



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