FA57SA50LCP Specs and Replacement
Type Designator: FA57SA50LCP
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 57 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 152 nS
Cossⓘ - Output Capacitance: 1500 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOT-227
FA57SA50LCP substitution
- MOSFET ⓘ Cross-Reference Search
FA57SA50LCP datasheet
fa57sa50lcp.pdf
FA57SA50LCP www.vishay.com Vishay Semiconductors Power MOSFET, 57 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device SOT-227 Low drain to case capacitance Low internal inductance Designed for industrial level UL approve... See More ⇒
fa57sa50lc.pdf
PD - 91650A FA57SA50LC HEXFET Power MOSFET Fully Isolated Package D Easy to Use and Parallel VDSS = 500V Low On-Resistance Dynamic dv/dt Rating RDS(on) = 0.08 Fully Avalanche Rated G Simple Drive Requirements ID = 57A Low Gate Charge Device S Low Drain to Case Capacitance Low Internal Inductance Description Third Generation HEXFETs from International Rectifier ... See More ⇒
fa57sa50.pdf
FA57SA50LCP Vishay Semiconductors Power MOSFET, 57 A FEATURES Fully isolated package Easy to use and parallel Low on-resistance Dynamic dV/dt rating Fully avalanche rated Simple drive requirements Low gate charge device SOT-227 Low drain to case capacitance Low internal inductance UL pending Compliant to RoHS directive 2002/95/EC D... See More ⇒
Detailed specifications: F5V50 , F5V90HVX2 , F60W60CP , F6B52HP , F6F70HVX2 , F7F60C3M , F7W90HVX2 , FA38SA50LCP , RU7088R , FC40SA50FKP , FC4A22050L , FC4B21080L , FC4B21300L , FC4B21320L , FC4B22070L , FC4B22180L , FC551601 .
Keywords - FA57SA50LCP MOSFET specs
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