FC654601 Datasheet and Replacement
Type Designator: FC654601
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: SMINI6-F3-B
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FC654601 Datasheet (PDF)
fc654601.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FC654601Silicon N-channel MOS FETFor switching circuits Overview PackageFC654601 is N-channel dual type small signal MOS FET employed small size Codesurface mounting package. SMini6-F3-BPackage dimension clicks here. Click! Features Low drain-source ON resistance: RDS(on) typ. = 6 W (VGS = 4.0
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2SK1120 | 2SK1700 | TWS6428FJ | NP83P04PDG | RSD201N10 | GSM1032 | SK2302A
Keywords - FC654601 MOSFET datasheet
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History: 2SK1120 | 2SK1700 | TWS6428FJ | NP83P04PDG | RSD201N10 | GSM1032 | SK2302A



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