FC8V2204
MOSFET. Datasheet pdf. Equivalent
Type Designator: FC8V2204
Marking Code: 4C
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.4
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 1500
nS
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015
Ohm
Package: WMINI8-F1
FC8V2204
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FC8V2204
Datasheet (PDF)
..1. Size:394K panasonic
fc8v2204.pdf 
This product complies with the RoHS Directive (EU 2002/95/EC).FC8V2204Silicon N-channel MOS FETFor lithium-ion secondary battery protection circuits Overview Package CodeN-channel dual type MOS FET in a compact surface mount type package. WMini8-F1 FeaturesPackage dimension clicks here. Click! Low drain-source ON resistance: RDS(on) typ. = 10.5 mW (VGS = 4
7.1. Size:573K panasonic
fc8v22090l.pdf
Doc No. TT4-EA-14490Revision. 3Product StandardsMOS FETFC8V22090LFC8V22090LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 9.5 m VGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level
7.2. Size:621K panasonic
fc8v22080l.pdf
Doc No. TT4-EA-14491Revision. 3Product StandardsMOS FETFC8V22080LFC8V22080LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 13 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1
8.1. Size:654K panasonic
fc8v22280l.pdf
Doc No. TT4-EA-15018Revision. 2Product StandardsMOS FETFC8V22280LFC8V22280LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 9.8 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / M
8.2. Size:662K panasonic
fc8v22290l.pdf
Doc No. TT4-EA-15019Revision. 2Product StandardsMOS FETFC8V22290LFC8V22290LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 11.5 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 /
8.3. Size:552K panasonic
fc8v22300l.pdf
Doc No. TT4-EA-15020Revision. 2Product StandardsMOS FETFC8V22300LFC8V22300LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 15 mWVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:
8.4. Size:281K panasonic
fc8v22150l.pdf
Doc No. TT4-EA-14832Revision. 1Product StandardsMOS FETFC8V22150LFC8V22150LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 9.0 m VGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0
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