FC8V2204 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FC8V2204
Маркировка: 4C
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 24 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 1.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 1500 ns
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Тип корпуса: WMINI8-F1
FC8V2204 Datasheet (PDF)
fc8v2204.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FC8V2204Silicon N-channel MOS FETFor lithium-ion secondary battery protection circuits Overview Package CodeN-channel dual type MOS FET in a compact surface mount type package. WMini8-F1 FeaturesPackage dimension clicks here. Click! Low drain-source ON resistance: RDS(on) typ. = 10.5 mW (VGS = 4
fc8v22090l.pdf
Doc No. TT4-EA-14490Revision. 3Product StandardsMOS FETFC8V22090LFC8V22090LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 9.5 m VGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level
fc8v22080l.pdf
Doc No. TT4-EA-14491Revision. 3Product StandardsMOS FETFC8V22080LFC8V22080LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 13 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1
fc8v22280l.pdf
Doc No. TT4-EA-15018Revision. 2Product StandardsMOS FETFC8V22280LFC8V22280LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 9.8 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / M
fc8v22290l.pdf
Doc No. TT4-EA-15019Revision. 2Product StandardsMOS FETFC8V22290LFC8V22290LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 11.5 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 /
fc8v22300l.pdf
Doc No. TT4-EA-15020Revision. 2Product StandardsMOS FETFC8V22300LFC8V22300LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 15 mWVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:
fc8v22150l.pdf
Doc No. TT4-EA-14832Revision. 1Product StandardsMOS FETFC8V22150LFC8V22150LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 9.0 m VGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0
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