FC8V22290L MOSFET. Datasheet pdf. Equivalent
Type Designator: FC8V22290L
Marking Code: 4H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.5 nC
trⓘ - Rise Time: 650 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0155 Ohm
Package: WMINI8-F1
FC8V22290L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FC8V22290L Datasheet (PDF)
fc8v22290l.pdf
Doc No. TT4-EA-15019Revision. 2Product StandardsMOS FETFC8V22290LFC8V22290LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 11.5 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 /
fc8v22280l.pdf
Doc No. TT4-EA-15018Revision. 2Product StandardsMOS FETFC8V22280LFC8V22280LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 9.8 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / M
fc8v22300l.pdf
Doc No. TT4-EA-15020Revision. 2Product StandardsMOS FETFC8V22300LFC8V22300LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Source-source ON Resistance:Rss(on) typ. = 15 mWVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:
fc8v22090l.pdf
Doc No. TT4-EA-14490Revision. 3Product StandardsMOS FETFC8V22090LFC8V22090LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 9.5 m VGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level
fc8v2204.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FC8V2204Silicon N-channel MOS FETFor lithium-ion secondary battery protection circuits Overview Package CodeN-channel dual type MOS FET in a compact surface mount type package. WMini8-F1 FeaturesPackage dimension clicks here. Click! Low drain-source ON resistance: RDS(on) typ. = 10.5 mW (VGS = 4
fc8v22080l.pdf
Doc No. TT4-EA-14491Revision. 3Product StandardsMOS FETFC8V22080LFC8V22080LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 13 mVGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1
fc8v22150l.pdf
Doc No. TT4-EA-14832Revision. 1Product StandardsMOS FETFC8V22150LFC8V22150LGate resistor installed Dual N-channel MOS FETUnit: mm2.9For lithium-ion secondary battery protection circuits0.3 0.168 7 6 5 Features Low drain-source ON resistance:Rds(on) typ. = 9.0 m VGS = 4.5 V) Built-in gate resistor Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: SSM3J35MFV
History: SSM3J35MFV
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918