FC8V36060L MOSFET. Datasheet pdf. Equivalent
Type Designator: FC8V36060L
Marking Code: M2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 3 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 7 nC
trⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: WMINI8-F1
FC8V36060L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FC8V36060L Datasheet (PDF)
fc8v36060l.pdf
Doc No. TT4-EA-14952Revision. 1Product StandardsMOS FETFC8V36060LFC8V36060LSingle N-channel MOS FETUnit: mm For lithium-ion secondary battery protection circuits2.9For load switching0.3 0.168 7 6 5 Features Low drain-source ON resistance:RDS(on) typ. = 70 mVGS = 4.5 V) Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 3 4(
fc8v36120l.pdf
Doc No. TT4-EA-14980Revision. 1Product StandardsMOS FETFC8V36120LFC8V36120LDual N-channel MOS FET Package dimensionUnit: mmFor lithium-ion secondary battery protection circuitsFor load switching 2.90.3 0.168 7 6 5 Features Low drain-source ON resistance:RDS(on) typ. = 50 m (VGS = 4.5 V) Low drive voltage: 2.5 V drive RoHS compliant (EU RoHS / UL-94
fc8v3303.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FC8V3303Silicon N-channel MOS FETFor DC-DC converter circuits Overview Package CodeFC8V3303 is the N-channel dual type MOSFET which is the most suitable for DC-DC converter circuits. WMini8-F1Package dimension clicks here. Click! Features N-channel dual type Pin Name Low drain-source
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: PHB44N06LT
History: PHB44N06LT
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