All MOSFET. FIR75N06G Datasheet

 

FIR75N06G MOSFET. Datasheet pdf. Equivalent


   Type Designator: FIR75N06G
   Marking Code: FIR75N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 110 W
   Maximum Drain-Source Voltage |Vds|: 60 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 75 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 50 nC
   Rise Time (tr): 10 nS
   Drain-Source Capacitance (Cd): 237 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0115 Ohm
   Package: TO-220

 FIR75N06G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FIR75N06G Datasheet (PDF)

 ..1. Size:1794K  first silicon
 fir75n06g.pdf

FIR75N06G FIR75N06G

FIR75N06GN-Channel Enhancement Mode Power MosfetPIN Connection TO-220DescriptionThe FIR75N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

 7.1. Size:2929K  first silicon
 fir75n075g.pdf

FIR75N06G FIR75N06G

FIR75N075GN-Channel Enhancement Mode Power MosfetPIN Connection TO-220DescriptionThe FIR75N075G is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 7.0mohm. Features Advanced trench process technology Specia

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , IRFP250 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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