FIR75N06G PDF and Equivalents Search

 

FIR75N06G Specs and Replacement

Type Designator: FIR75N06G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 75 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 237 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: TO-220

FIR75N06G substitution

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FIR75N06G datasheet

 ..1. Size:1794K  first silicon
 fir75n06g.pdf pdf_icon

FIR75N06G

FIR75N06G N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220 Description The FIR75N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON) ... See More ⇒

 7.1. Size:2929K  first silicon
 fir75n075g.pdf pdf_icon

FIR75N06G

FIR75N075G N-Channel Enhancement Mode Power Mosfet PIN Connection TO-220 Description The FIR75N075G is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 7.0mohm. Features Advanced trench process technology Specia... See More ⇒

Detailed specifications: FC8V3303, FC8V36060L, FC8V36120L, FG654301, FG694301, FG6K4206, FIR18N20G, FIR210N06G, STP75NF75, FIR75N075G, FJ330301, FJ3303010L, FJ350301, FJ4B0110, FJ4B0111, FJ4B0112, FJ4B0124

Keywords - FIR75N06G MOSFET specs

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