All MOSFET. FIR75N06G Datasheet

 

FIR75N06G Datasheet and Replacement


   Type Designator: FIR75N06G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 237 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: TO-220
 

 FIR75N06G substitution

   - MOSFET ⓘ Cross-Reference Search

 

FIR75N06G Datasheet (PDF)

 ..1. Size:1794K  first silicon
 fir75n06g.pdf pdf_icon

FIR75N06G

FIR75N06GN-Channel Enhancement Mode Power MosfetPIN Connection TO-220DescriptionThe FIR75N06G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =75A RDS(ON)

 7.1. Size:2929K  first silicon
 fir75n075g.pdf pdf_icon

FIR75N06G

FIR75N075GN-Channel Enhancement Mode Power MosfetPIN Connection TO-220DescriptionThe FIR75N075G is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 7.0mohm. Features Advanced trench process technology Specia

Datasheet: FC8V3303 , FC8V36060L , FC8V36120L , FG654301 , FG694301 , FG6K4206 , FIR18N20G , FIR210N06G , 12N60 , FIR75N075G , FJ330301 , FJ3303010L , FJ350301 , FJ4B0110 , FJ4B0111 , FJ4B0112 , FJ4B0124 .

History: 2SK1693

Keywords - FIR75N06G MOSFET datasheet

 FIR75N06G cross reference
 FIR75N06G equivalent finder
 FIR75N06G lookup
 FIR75N06G substitution
 FIR75N06G replacement

 

 
Back to Top

 


 
.