FJ3303010L Datasheet and Replacement
Type Designator: FJ3303010L
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
Package: SOT-723
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FJ3303010L Datasheet (PDF)
fj3303010l.pdf

Doc No. TT4-EA-12653Revision. 3Product StandardsMOS FETFJ3303010LFJ3303010LSilicon P-channel MOSFETUnit : mm For switching1.2FJ350301 in SSSMini3 type package 0.3 0.133 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)12 Marking Symbol :U10.2 0.52(0.4)(0.4) Packaging0.8
fj330301.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FJ330301Silicon P-channel MOS FETFor switching circuits Overview PackageFJ330301 is P-channel small signal MOS FET employed small size surface Codemounting package. SSSMini3-F2-B Pin Name Features 1: Gate Low drain-source ON resistance: RDS(on) typ. = 4 W (VGS = -4.0 V) 2: Source H
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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History: TK2P60D | IRFBG20



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