FJ3303010L MOSFET. Datasheet pdf. Equivalent
Type Designator: FJ3303010L
Marking Code: U1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 0.1 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 7 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
Package: SOT-723
FJ3303010L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FJ3303010L Datasheet (PDF)
fj3303010l.pdf
Doc No. TT4-EA-12653Revision. 3Product StandardsMOS FETFJ3303010LFJ3303010LSilicon P-channel MOSFETUnit : mm For switching1.2FJ350301 in SSSMini3 type package 0.3 0.133 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)12 Marking Symbol :U10.2 0.52(0.4)(0.4) Packaging0.8
fj330301.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FJ330301Silicon P-channel MOS FETFor switching circuits Overview PackageFJ330301 is P-channel small signal MOS FET employed small size surface Codemounting package. SSSMini3-F2-B Pin Name Features 1: Gate Low drain-source ON resistance: RDS(on) typ. = 4 W (VGS = -4.0 V) 2: Source H
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
LIST
Last Update
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918