All MOSFET. FJ6K0101 Datasheet

 

FJ6K0101 Datasheet and Replacement


   Type Designator: FJ6K0101
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 40 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: WSMINI6-F1-B
 

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FJ6K0101 Datasheet (PDF)

 ..1. Size:461K  panasonic
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FJ6K0101

This product complies with the RoHS Directive (EU 2002/95/EC).FJ6K0101Silicon P-channel MOS FETFor load switch circuits Overview PackageFJ6K0101 is the low on-resistance P-channel MOS FET designed for load Codeswitch circuits. WSMini6-F1-B Pin Name Features 1: Drain 4: Source Low drain-source ON resistance: RDS(on) typ. = 36 mW (VGS = 1.8 V) 2: D

 0.1. Size:391K  panasonic
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FJ6K0101

Doc No. TT4-EA-12484Revision. 2Product StandardsMOS FETFJ6K01010LFJ6K01010LSilicon P-channel MOS FETUnit : mm 2.0For switching0.2 0.136 5 4 Features Low drain-source On-state resistance : RDS (on) typ. = 26 m ( VGS = -4.5 V ) Low drive voltage : 1.8 V drive Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)1 2 30.7

Datasheet: FIR75N075G , FJ330301 , FJ3303010L , FJ350301 , FJ4B0110 , FJ4B0111 , FJ4B0112 , FJ4B0124 , IRF9540N , FJ6K01010L , FK330301 , FK3303010L , FK330307 , FK330308 , FK330309 , FK330601 , FK3306010L .

History: TK25N60X

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