FK350601
MOSFET. Datasheet pdf. Equivalent
Type Designator: FK350601
Marking Code: CV
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5
V
|Id|ⓘ - Maximum Drain Current: 0.1
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 7
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 12
Ohm
Package: SMINI3-F2-B
FK350601
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FK350601
Datasheet (PDF)
..1. Size:488K panasonic
fk350601.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FK350601Silicon N-channel MOS FETFor switching circuits Overview PackageFK350601 is N-channel small signal MOS FET employed small size surface Codemounting package. SMini3-F2-B Pin Name Features 1: Gate Low drain-source ON resistance: RDS(on) typ. = 6 W (VGS = 4.0 V) 2: Source High-spe
0.1. Size:363K panasonic
fk3506010l.pdf
Doc No. TT4-EA-12624Revision. 3Product StandardsMOS FETFK3506010LFK3506010LSilicon N-channel MOS FETUnit : mm For switching2.0FK330601 in SMini3 type package 0.3 0.133 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)12 Marking Symbol :CV0.9(0.65)(0.65) Packaging1.3 Emb
9.1. Size:420K panasonic
fk350301.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FK350301Silicon N-channel MOS FETFor switching circuits Overview PackageFK350301 is N-channel small signal MOS FET employed small size surface Codemounting package. SMini3-F2-BPackage dimension clicks here. Click! Features Low drain-source ON resistance: RDS(on) typ. = 2 W (VGS = 4.0 V) Pin
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