FK3906010L Specs and Replacement
Type Designator: FK3906010L
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 12 Ohm
Package: SC-89
FK3906010L substitution
- MOSFET ⓘ Cross-Reference Search
FK3906010L datasheet
fk3906010l.pdf
Doc No. TT4-EA-12654 Revision. 3 Product Standards MOS FET FK3906010L FK3906010L Silicon N-channel MOSFET Unit mm For switching 1.6 FK350601 in SSMini3 type package 0.26 0.13 3 Features Low drive voltage 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL Level 1 compliant) 12 Marking Symbol CV 0.7 (0.5)(0.5) Packaging 1.0 Emb... See More ⇒
fk390601.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). FK390601 Silicon N-channel MOS FET For switching circuits Overview Package FK390601 is N-channel small signal MOS FET employed small size surface Code mounting package. SSMini3-F3-B Pin Name Features 1 Gate Low drain-source ON resistance RDS(on) typ. = 6 W (VGS = 4.0 V) 2 Source High-sp... See More ⇒
Detailed specifications: FK330309, FK330601, FK3306010L, FK350301, FK350601, FK3506010L, FK360602, FK390601, STP80NF70, FK3F0301, FK3F0308, FK4B0110, FK4B0111, FK4B0112, FK6K0201, FK6K02010L, FK6K0612
Keywords - FK3906010L MOSFET specs
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