FK4B0110 Specs and Replacement
Type Designator: FK4B0110
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: XLGA004
FK4B0110 substitution
- MOSFET ⓘ Cross-Reference Search
FK4B0110 datasheet
fk4b0110.pdf
Doc No. TT4-EA-14954 Revision. 2 Product Standards MOS FET FK4B01100L FK4B01100L Single N-channel MOS FET Unit mm For oad switching circuits 0.80 4 3 TOP Features Low Drain-source ON resistance RDS(on) typ. = 27 m (VGS = 2.5 V) 1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL Level 1 compliant) 0.20 Marking Symbol 1A BOTTOM Packagin... See More ⇒
fk4b0112.pdf
Doc No. TT4-EA-14956 Revision. 1 Product Standards MOS FET FK4B01120L FK4B01120L Single N-channel MOS FET Unit mm For Load switching circuits 1.0 3 4 TOP Features Low Drain-source ON resistance RDS(on) typ. = 17m VGS = 2.5 V) 1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL Level 1 compliant) 0.25 3 4 Marking Symbol 1C BOTTOM 2 1 Pa... See More ⇒
fk4b0111.pdf
Doc No. TT4-EA-14955 Revision. 1 Product Standards MOS FET FK4B01110L FK4B01110L Single N-channel MOS FET Unit mm For Load switching circuits 0.60 4 3 TOP Features Low Drain-source ON resistance RDS(on) typ. = 57m (VGS = 2.5 V) 1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL Level 1 compliant) 0.15 Marking Symbol 1B BOTTOM Packaging ... See More ⇒
Detailed specifications: FK350301, FK350601, FK3506010L, FK360602, FK390601, FK3906010L, FK3F0301, FK3F0308, AO4407, FK4B0111, FK4B0112, FK6K0201, FK6K02010L, FK6K0612, FK8V0302, FK8V0303, FK8V0304
Keywords - FK4B0110 MOSFET specs
FK4B0110 cross reference
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FK4B0110 replacement
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