FK4B0110 Datasheet and Replacement
Type Designator: FK4B0110
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: XLGA004
FK4B0110 substitution
FK4B0110 Datasheet (PDF)
fk4b0110.pdf
Doc No. TT4-EA-14954Revision. 2Product StandardsMOS FETFK4B01100LFK4B01100LSingle N-channel MOS FETUnit: mmFor oad switching circuits0.804 3TOP Features Low Drain-source ON resistance:RDS(on) typ. = 27 m(VGS = 2.5 V)1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.20 Marking Symbol: 1ABOTTOM Packagin
fk4b0112.pdf
Doc No. TT4-EA-14956Revision. 1Product StandardsMOS FETFK4B01120LFK4B01120LSingle N-channel MOS FETUnit: mmFor Load switching circuits1.034TOP Features Low Drain-source ON resistance:RDS(on) typ. = 17mVGS = 2.5 V)1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.253 4 Marking Symbol: 1CBOTTOM2 1 Pa
fk4b0111.pdf
Doc No. TT4-EA-14955Revision. 1Product StandardsMOS FETFK4B01110LFK4B01110LSingle N-channel MOS FETUnit: mmFor Load switching circuits0.604 3TOP Features Low Drain-source ON resistance:RDS(on) typ. = 57m(VGS = 2.5 V)1 2 CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level 1 compliant)0.15 Marking Symbol: 1BBOTTOM Packaging
Datasheet: FK350301 , FK350601 , FK3506010L , FK360602 , FK390601 , FK3906010L , FK3F0301 , FK3F0308 , AO4407 , FK4B0111 , FK4B0112 , FK6K0201 , FK6K02010L , FK6K0612 , FK8V0302 , FK8V0303 , FK8V0304 .
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FK4B0110 replacement
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