FK6K0201 Datasheet and Replacement
Type Designator: FK6K0201
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 4.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
Package: WSMINI6-F1-B
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FK6K0201 Datasheet (PDF)
fk6k0201.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FK6K0201Silicon N-channel MOS FETFor switch circuits Overview PackageFK6K0201 is N-channel signal type MOS FET employed small size surface Codemounting package. WSMini6-F1-B Pin Name 1: Drain 4: Source Features 2: Drain 5: Drain Low drain-source ON resistance: RDS(on) typ. = 13 mW (VGS =
fk6k02010l.pdf

Doc No. TT4-EA-12566Revision. 2Product StandardsMOS FETFK6K02010LFK6K02010LSilicon N-channel MOS FETUnit : mm 2.0For switching0.2 0.136 5 4 Features Low drain-source On-state Resistance:RDS(on)typ. = 13 m VGS = 4.5 V) Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 30.7
fk6k0612.pdf

Doc No. TT4-EA-14979Revision. 1Product StandardsMOS FETFK6K06120LFK6K06120LSingle N-channel MOS FET Package dimensionUnit: mmFor lithium-ion secondary battery protection circuitsFor load switching 2.00.2 0.136 5 4 Features Low drain-source ON resistance:RDS(on) typ. = 60 m (VGS = 4.5 V) Low drive voltage: 2.5 V drive RoHS compliant (EU RoHS / UL-94
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: PHD14NQ20T | IXTA220N075T7 | HCS60R260ST | HMS8N65D | AP60T03GH | FKG1020 | FDS86252
Keywords - FK6K0201 MOSFET datasheet
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History: PHD14NQ20T | IXTA220N075T7 | HCS60R260ST | HMS8N65D | AP60T03GH | FKG1020 | FDS86252



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