FK6K0201 Datasheet and Replacement
Type Designator: FK6K0201
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 155 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0175 Ohm
Package: WSMINI6-F1-B
FK6K0201 substitution
FK6K0201 Datasheet (PDF)
fk6k0201.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FK6K0201Silicon N-channel MOS FETFor switch circuits Overview PackageFK6K0201 is N-channel signal type MOS FET employed small size surface Codemounting package. WSMini6-F1-B Pin Name 1: Drain 4: Source Features 2: Drain 5: Drain Low drain-source ON resistance: RDS(on) typ. = 13 mW (VGS =
fk6k02010l.pdf

Doc No. TT4-EA-12566Revision. 2Product StandardsMOS FETFK6K02010LFK6K02010LSilicon N-channel MOS FETUnit : mm 2.0For switching0.2 0.136 5 4 Features Low drain-source On-state Resistance:RDS(on)typ. = 13 m VGS = 4.5 V) Low drive voltage: 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL : Level 1 compliant)1 2 30.7
fk6k0612.pdf

Doc No. TT4-EA-14979Revision. 1Product StandardsMOS FETFK6K06120LFK6K06120LSingle N-channel MOS FET Package dimensionUnit: mmFor lithium-ion secondary battery protection circuitsFor load switching 2.00.2 0.136 5 4 Features Low drain-source ON resistance:RDS(on) typ. = 60 m (VGS = 4.5 V) Low drive voltage: 2.5 V drive RoHS compliant (EU RoHS / UL-94
Datasheet: FK360602 , FK390601 , FK3906010L , FK3F0301 , FK3F0308 , FK4B0110 , FK4B0111 , FK4B0112 , STF13NM60N , FK6K02010L , FK6K0612 , FK8V0302 , FK8V0303 , FK8V0304 , FK8V03040L , FK8V03050L , FK8V0306 .
History: AON6538 | HM6804 | F5F50VX2 | NCE0140I2 | PHD14NQ20T | NCE70N900K | RFL2N06L
Keywords - FK6K0201 MOSFET datasheet
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History: AON6538 | HM6804 | F5F50VX2 | NCE0140I2 | PHD14NQ20T | NCE70N900K | RFL2N06L



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