All MOSFET. FK8V0304 Datasheet

 

FK8V0304 Datasheet and Replacement


   Type Designator: FK8V0304
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 33 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SC-115
 

 FK8V0304 substitution

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FK8V0304 Datasheet (PDF)

 ..1. Size:397K  panasonic
fk8v0304 fk8v03040l.pdf pdf_icon

FK8V0304

Doc No. TT4-EA-13169Revision. 3Product StandardsMOS FETFK8V03040LFK8V03040LSilicon N-channel MOSFETUnit: mm For lithium-ion secondary battery protecion circuit2.90.3 0.16For DC-DC Converter8 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ = 11 m (VGS = 4.5 V) High-speed switching : Qg = 7.2 nC Halogen-free / RoHS compliant1 2 3

 7.1. Size:264K  panasonic
fk8v0302.pdf pdf_icon

FK8V0304

This product complies with the RoHS Directive (EU 2002/95/EC).FK8V0302Silicon N-channel MOS FETFor lithium-ion secondary battery protection circuits Overview PackageFK8V0302 is N-channel single type small signal MOS FET adopted small Codesize surface mounting package. WMini8-F1Package dimension clicks here. Click! Features Low drain-source ON resistance: RD

 7.2. Size:389K  panasonic
fk8v03050l.pdf pdf_icon

FK8V0304

Doc No. TT4-EA-13029Revision. 3Product StandardsMOS FETFK8V03050LFK8V03050LSilicon N-channel MOSFETUnit: mm For lithium-ion secondary battery protecion circuit2.9For DC-DC Converter0.3 0.168 7 6 5 Features Low drain-source On-state Resistance RDS(on) typ = 16 m (VGS = 4.5 V) High-speed switching : Qg = 5.1 nC Halogen-free / RoHS compliant1 2 3

 7.3. Size:404K  panasonic
fk8v0306.pdf pdf_icon

FK8V0304

This product complies with the RoHS Directive (EU 2002/95/EC).FK8V0306Silicon N-channel MOS FETFor DC-DC converter circuits Overview Package N-channel single type, MOS FET in a compact surface mount type package. Code WMini8-F1 FeaturesPackage dimension clicks here. Click! Low drain-source ON resistance: RDS(on) typ. = 15 mW (VGS = 10 V) High-speed swi

Datasheet: FK4B0110 , FK4B0111 , FK4B0112 , FK6K0201 , FK6K02010L , FK6K0612 , FK8V0302 , FK8V0303 , SKD502T , FK8V03040L , FK8V03050L , FK8V0306 , FK8V0606 , FK8V06120L , FKG1020 , FKH0660 , FKI06051 .

History: 2SK222 | IXTQ240N055T | AO4940 | SI2321 | NCE65N520K | STLT29 | AOB66916L

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