All MOSFET. FKG1020 Datasheet

 

FKG1020 Datasheet and Replacement


   Type Designator: FKG1020
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO-220F
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FKG1020 Datasheet (PDF)

 ..1. Size:705K  sanken-ele
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FKG1020

100V, 20A Low RDS(ON) N ch Trench Power MOSFET EKG1020 / FKG1020 Features Package TO220 TO220F VDS ------------------------------------------------------ 100 V EKG1020 FKG1020 ID ---------------------------------------------------------- 20 A RDS(ON) --------------- 33 m typ.(VGS = 10 V, ID = 10 A) Built-in Gate protect diode 100 % UIL tested Ro

 ..2. Size:251K  inchange semiconductor
 fkg1020.pdf pdf_icon

FKG1020

isc N-Channel MOSFET Transistor FKG1020FEATURESDrain Current I =20A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 52m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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History: HCS60R260ST | STP80NS04ZB | HMS8N65D | IXTA220N075T7 | SML601R3AN | FDS86252 | AP60T03GH

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