FL525205 MOSFET. Datasheet pdf. Equivalent
Type Designator: FL525205
Marking Code: Y0
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id|ⓘ - Maximum Drain Current: 2.1 A
Tjⓘ - Maximum Junction Temperature: 125 °C
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: MINI5-G3-B
FL525205 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FL525205 Datasheet (PDF)
fl525205.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FL525205Silicon P-channel MOS FET (FET)Silicon epitaxial planar type (SBD)For DC-DC converter circuitsFor switching circuits Overview Package CodeFL525205 is the P-channel single type small signal MOS FET with SBD. Mini5-G3-B Features Package dimension clicks here. Click! Low drain-source ON r
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: MTP3055E
History: MTP3055E
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918