FL525205 Specs and Replacement
Type Designator: FL525205
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: MINI5-G3-B
FL525205 substitution
- MOSFET ⓘ Cross-Reference Search
FL525205 datasheet
fl525205.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). FL525205 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits Overview Package Code FL525205 is the P-channel single type small signal MOS FET with SBD. Mini5-G3-B Features Package dimension clicks here. Click! Low drain-source ON r... See More ⇒
Detailed specifications: FKI06269, FKI07076, FKI07117, FKI07174, FKI10126, FKI10198, FKI10300, FKI10531, IRF830, FL6L5201, FL6L5203, FL6L5206, FL6L5207, FM200CD1D5B, FM200HB1D5B, FM200TU-07A, FM200TU-2A
Keywords - FL525205 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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