FL525205 Datasheet and Replacement
Type Designator: FL525205
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 2.1 A
Tjⓘ - Maximum Junction Temperature: 125 °C
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: MINI5-G3-B
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FL525205 Datasheet (PDF)
fl525205.pdf

This product complies with the RoHS Directive (EU 2002/95/EC).FL525205Silicon P-channel MOS FET (FET)Silicon epitaxial planar type (SBD)For DC-DC converter circuitsFor switching circuits Overview Package CodeFL525205 is the P-channel single type small signal MOS FET with SBD. Mini5-G3-B Features Package dimension clicks here. Click! Low drain-source ON r
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: VMM1500-0075X2 | BUK7M6R7-40H | HY1804V | HAT1040T | HGA037N10T | IRF3007PBF | AOI538
Keywords - FL525205 MOSFET datasheet
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History: VMM1500-0075X2 | BUK7M6R7-40H | HY1804V | HAT1040T | HGA037N10T | IRF3007PBF | AOI538



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