FL525205 Datasheet and Replacement
Type Designator: FL525205
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: MINI5-G3-B
FL525205 substitution
FL525205 Datasheet (PDF)
fl525205.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).FL525205Silicon P-channel MOS FET (FET)Silicon epitaxial planar type (SBD)For DC-DC converter circuitsFor switching circuits Overview Package CodeFL525205 is the P-channel single type small signal MOS FET with SBD. Mini5-G3-B Features Package dimension clicks here. Click! Low drain-source ON r
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
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