All MOSFET. SPP80N06S2-08 Datasheet

 

SPP80N06S2-08 Datasheet and Replacement


   Type Designator: SPP80N06S2-08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 215 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 740 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
 

 SPP80N06S2-08 substitution

   - MOSFET ⓘ Cross-Reference Search

 

SPP80N06S2-08 Datasheet (PDF)

 ..1. Size:419K  infineon
spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf pdf_icon

SPP80N06S2-08

SPI80N06S2-08SPP80N06S2-08,SPB80N06S2-08OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8 m Enhancement modeID 80 A 175C operating temperatureP- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-08 P- TO220 -3-1 Q67060-S42832N0608SPB80N06S2-08 P- TO263 -

 2.1. Size:345K  infineon
spp80n06s2-05 spb80n06s2-05.pdf pdf_icon

SPP80N06S2-08

www.DataSheet4U.com SPP80N06S2-05SPB80N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS 55 V N-ChannelRDS(on) max. SMD version 4.8 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-05 P- TO220 -3-1 Q67040-S42452N0605SPB80N06S2-05

 2.2. Size:516K  infineon
spb80n06s2-09 spp80n06s2-09.pdf pdf_icon

SPP80N06S2-08

SPP80N06S2-09Preliminary dataSPB80N06S2-09OptiMOS =Power-Transistor===Product SummaryFeatureVDS55 V N-ChannelRDS(on) 9.1 m Enhancement modeID 80 A 175C operating temperatureP-TO263-3-2 P-TO220-3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-09 P-TO220-3-1 Q67060-S60252N0609SPB80N06S2-09 P-TO263-3-2 Q67060-S6027 2N0609Maxi

 4.1. Size:311K  infineon
spp80n06s2l-09 spb80n06s2l-09.pdf pdf_icon

SPP80N06S2-08

SPP80N06S2L-09SPB80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8.5 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-09 P- TO220 -3-1 Q67060-S60312N06L09SPB80N06S2L-09 P- TO263 -3-2

Datasheet: FM600TU-3A , FM6K6201 , FM6L5202 , FM6L52020L , SWP3205 , SWP10N65 , SWF10N65 , ST16N10 , IRFP460 , SPB80N06S2-08 , SPI80N06S2-08 , SLP10N70C , SLF10N70C , PTW40N50 , PJM90H09NTF , HY1606P , HY1606B .

History: DH019N04I | APM2324A

Keywords - SPP80N06S2-08 MOSFET datasheet

 SPP80N06S2-08 cross reference
 SPP80N06S2-08 equivalent finder
 SPP80N06S2-08 lookup
 SPP80N06S2-08 substitution
 SPP80N06S2-08 replacement

 

 
Back to Top

 


 
.