HY1606P MOSFET Datasheet: N-Ch, 60V, 66A. Full specification with pinout and replacement list

HY1606P Specs and Replacement

Type Designator: HY1606P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 88 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 66 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 764 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm

Package: TO-220FB

HY1606P substitution

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HY1606P datasheet

..1. Size:627K hymexa
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HY1606P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/66A RDS(ON)= 10.4 m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S Lead Free and Green Devices Available D G (RoHS Compliant) S D G TO-220FB-3L TO-263-2L Applications Switching application Power Management for Inverter Systems. N-Channel MOSFET Ordering and ... See More ⇒

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HY1606D/U/V N-Channel Enhancement Mode MOSFET Features Pin Description 60V/66A, RDS(ON)=10.4 m (typ.) @ VGS=10V Avalanche Rated Reliable and Rugged S D S S Lead Free and Green Devices Available G D D G G (RoHS Compliant) S D G TO-251-3L TO-251-3L TO-252-2L Applications Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marki... See More ⇒

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HY1607D/U/V N-Channel Enhancement Mode MOSFET Features Pin Description 68V/70A RDS(ON)= 6.8m (typ.) @ VGS=10V 100% avalanche tested Reliable and Rugged S D G Lead Free and Green Devices Available S D (RoHS Compliant) G TO-252-2L TO-251-3L Applications Power Management for Inverter Systems. N-Channel MOSFET Ordering and Marking Information Package Cod... See More ⇒