SDF10N100JEB Specs and Replacement

Type Designator: SDF10N100JEB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 110 max nS

Cossⓘ - Output Capacitance: 550 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO254

SDF10N100JEB substitution

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SDF10N100JEB datasheet

 5.1. Size:165K  solitron
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SDF10N100JEB

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 8.1. Size:453K  samhop
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SDF10N100JEB

SDP10N60 SDF10N60 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Typ VDSS ID Rugged and reliable. 600V 10A 0.62 @ VGS=10V TO-220 and TO-220F Package. D G D S G D S G SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package M... See More ⇒

 8.2. Size:159K  solitron
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SDF10N100JEB

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 8.3. Size:165K  solitron
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SDF10N100JEB

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Detailed specifications: SDF054JAA-S, SDF054JAA-U, SDF054JAB-D, SDF054JAB-S, SDF054JAB-U, SDF100NA40HI, SDF100NA40JD, SDF10N100JEA, IRLZ44N, SDF10N100JEC, SDF10N100JED, SDF10N100SXH, SDF10N60, SDF10N90GAF, SDF11N100GAF, SDF11N90GAF, SDF120JAA-D

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