SDF10N100JEB Datasheet and Replacement
Type Designator: SDF10N100JEB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 145 nC
tr ⓘ - Rise Time: 110(max) nS
Cossⓘ - Output Capacitance: 550 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO254
SDF10N100JEB substitution
SDF10N100JEB Datasheet (PDF)
sdf10n60 sdp10n60 sdp10n60.pdf
SDP10N60SDF10N60aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) () TypVDSS IDRugged and reliable.600V 10A 0.62 @ VGS=10V TO-220 and TO-220F Package.DG D S G D S GSDP SERIES SDF SERIESTO-220 TO-220FSORDERING INFORMATIONOrdering Code Package M
Datasheet: SDF054JAA-S , SDF054JAA-U , SDF054JAB-D , SDF054JAB-S , SDF054JAB-U , SDF100NA40HI , SDF100NA40JD , SDF10N100JEA , IRF640N , SDF10N100JEC , SDF10N100JED , SDF10N100SXH , SDF10N60 , SDF10N90GAF , SDF11N100GAF , SDF11N90GAF , SDF120JAA-D .
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