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3N128 Spec and Replacement


   Type Designator: 3N128
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
   |Id| ⓘ - Maximum Drain Current: 0.05 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Cossⓘ - Output Capacitance: 1.4 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 200 Ohm
   Package: TO72

 3N128 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

3N128 Specs

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3N128

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Detailed specifications: HY1606B , HS50N06PA , FS14UM-10 , DMG4712SSS , BRCS4435SC , B0210D , 2SK4119LS , 2SK4098LS , IRFP250N , 3N143 , APM2509NU , CHM04N10ZPT , DTP4503 , IRF60R217 , PFP12N65 , PFF12N65 , PK6D0BA .

Keywords - 3N128 MOSFET specs

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