PFF12N65 Datasheet. Specs and Replacement

Type Designator: PFF12N65  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.57 Ohm

Package: TO220F

  📄📄 Copy 

PFF12N65 substitution

- MOSFET ⓘ Cross-Reference Search

 

PFF12N65 datasheet

 ..1. Size:1430K  china
 pfp12n65 pff12n65.pdf pdf_icon

PFF12N65

PFP12N65/PFF12N65 FEATURES 650V N-Channel MOSFET Originative New Design 100% EAS Test Rugged Gate Oxide Technology Drain BVDSS = 650 V Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Gate RDS(on) typ = 0.46 Unequalled Gate Charge 48 nC (Typ.) E... See More ⇒

Detailed specifications: 2SK4098LS, 3N128, 3N143, APM2509NU, CHM04N10ZPT, DTP4503, IRF60R217, PFP12N65, IRF9540N, PK6D0BA, SVF830T, SVF830D, SVF830MJ, SVF830FJ, SVF830F, N0100P, N0300N

Keywords - PFF12N65 MOSFET specs

 PFF12N65 cross reference

 PFF12N65 equivalent finder

 PFF12N65 pdf lookup

 PFF12N65 substitution

 PFF12N65 replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs