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SVF830D Specs and Replacement

Type Designator: SVF830D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 76 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37.4 nS

Cossⓘ - Output Capacitance: 72 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO252

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SVF830D datasheet

 8.1. Size:597K  silan
 svf830t-d-mj-fj-f.pdf pdf_icon

SVF830D

SVF830T/D/MJ/FJ/F_Datasheet 5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF830T/D/MJ/FJ/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching perfo... See More ⇒

Detailed specifications: APM2509NU, CHM04N10ZPT, DTP4503, IRF60R217, PFP12N65, PFF12N65, PK6D0BA, SVF830T, AO3401, SVF830MJ, SVF830FJ, SVF830F, N0100P, N0300N, N0300P, N0301N, N0301P

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