All MOSFET. SVF830FJ Datasheet

 

SVF830FJ Datasheet and Replacement


   Type Designator: SVF830FJ
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37.4 nS
   Cossⓘ - Output Capacitance: 72 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220FJ
 

 SVF830FJ substitution

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SVF830FJ Datasheet (PDF)

 8.1. Size:597K  silan
 svf830t-d-mj-fj-f.pdf pdf_icon

SVF830FJ

SVF830T/D/MJ/FJ/F_Datasheet 5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF830T/D/MJ/FJ/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching perfo

Datasheet: DTP4503 , IRF60R217 , PFP12N65 , PFF12N65 , PK6D0BA , SVF830T , SVF830D , SVF830MJ , 8205A , SVF830F , N0100P , N0300N , N0300P , N0301N , N0301P , N0302P , N0400P .

History: FDMS3668S | TPC8041 | SDT01N02 | SL2102 | IRFH8303PBF | NTMFS5C628NLT1G | SI9435BDY

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