SVF830FJ Specs and Replacement
Type Designator: SVF830FJ
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 37.4 nS
Cossⓘ - Output Capacitance: 72 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220FJ
SVF830FJ substitution
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SVF830FJ datasheet
svf830t-d-mj-fj-f.pdf
SVF830T/D/MJ/FJ/F_Datasheet 5A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF830T/D/MJ/FJ/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching perfo... See More ⇒
Detailed specifications: DTP4503, IRF60R217, PFP12N65, PFF12N65, PK6D0BA, SVF830T, SVF830D, SVF830MJ, IRFP260, SVF830F, N0100P, N0300N, N0300P, N0301N, N0301P, N0302P, N0400P
Keywords - SVF830FJ MOSFET specs
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