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N0100P Specs and Replacement

Type Designator: N0100P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: SOT23

N0100P substitution

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N0100P datasheet

 ..1. Size:254K  renesas
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N0100P

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

Detailed specifications: PFP12N65, PFF12N65, PK6D0BA, SVF830T, SVF830D, SVF830MJ, SVF830FJ, SVF830F, SPP20N60C3, N0300N, N0300P, N0301N, N0301P, N0302P, N0400P, N0412N, N0413N

Keywords - N0100P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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