SDF10N60 Datasheet. Specs and Replacement
Type Designator: SDF10N60 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 max nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO254
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SDF10N60 substitution
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SDF10N60 datasheet
sdf10n60 sdp10n60 sdp10n60.pdf
SDP10N60 SDF10N60 a S mHop Microelectronics C orp. Ver 1.1 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) ( ) Typ VDSS ID Rugged and reliable. 600V 10A 0.62 @ VGS=10V TO-220 and TO-220F Package. D G D S G D S G SDP SERIES SDF SERIES TO-220 TO-220F S ORDERING INFORMATION Ordering Code Package M... See More ⇒
Detailed specifications: SDF054JAB-U, SDF100NA40HI, SDF100NA40JD, SDF10N100JEA, SDF10N100JEB, SDF10N100JEC, SDF10N100JED, SDF10N100SXH, IRF640N, SDF10N90GAF, SDF11N100GAF, SDF11N90GAF, SDF120JAA-D, SDF120JAA-S, SDF120JAA-U, SDF120JAB-D, SDF120JAB-S
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