NTB5860NL MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB5860NL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 283 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 220 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 220 nC
trⓘ - Rise Time: 58 nS
Cossⓘ - Output Capacitance: 1127 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: D2PAK
NTB5860NL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB5860NL Datasheet (PDF)
ntb5860nl nvb5860nl.pdf
NTB5860NL, NTP5860NL,NVB5860NLN-Channel Power MOSFET60 V, 220 A, 3.0 mWFeatureshttp://onsemi.com Low RDS(on) High Current CapabilityV(BR)DSS RDS(on) MAX ID MAX 100% Avalanche Tested3.0 mW @ 10 V60 V 220 A These Devices are Pb-Free, Halogen Free and are RoHS Compliant3.6 mW @ 4.5 V NVB Prefix for Automotive and Other Applications RequiringUnique Site
ntb5860n ntp5860n nvb5860n.pdf
NTB5860N, NTP5860N,NVB5860NN-Channel Power MOSFET60 V, 220 A, 3.0 mWFeatureshttp://onsemi.com Low RDS(on) High Current Capability V(BR)DSS RDS(on) MAX ID MAX 100% Avalanche Tested60 V 3.0 mW @ 10 V 220 A These Devices are Pb-Free, Halogen Free and are RoHS Compliant NVB Prefix for Automotive and Other Applications RequiringDUnique Site and Control Change
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
