NTB5860NL MOSFET Datasheet: N-Ch, 60V, 220A. Full specification with pinout and replacement list

NTB5860NL Specs and Replacement

Type Designator: NTB5860NL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 283 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 220 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 1127 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: D2PAK

NTB5860NL substitution

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NTB5860NL datasheet

..1. Size:112K onsemi
ntb5860nl nvb5860nl.pdf pdf_icon

NTB5860NL, NTP5860NL, NVB5860NL N-Channel Power MOSFET 60 V, 220 A, 3.0 mW Features http //onsemi.com Low RDS(on) High Current Capability V(BR)DSS RDS(on) MAX ID MAX 100% Avalanche Tested 3.0 mW @ 10 V 60 V 220 A These Devices are Pb-Free, Halogen Free and are RoHS Compliant 3.6 mW @ 4.5 V NVB Prefix for Automotive and Other Applications Requiring Unique Site ... See More ⇒

6.1. Size:113K onsemi
ntb5860n ntp5860n nvb5860n.pdf pdf_icon

NTB5860N, NTP5860N, NVB5860N N-Channel Power MOSFET 60 V, 220 A, 3.0 mW Features http //onsemi.com Low RDS(on) High Current Capability V(BR)DSS RDS(on) MAX ID MAX 100% Avalanche Tested 60 V 3.0 mW @ 10 V 220 A These Devices are Pb-Free, Halogen Free and are RoHS Compliant NVB Prefix for Automotive and Other Applications Requiring D Unique Site and Control Change... See More ⇒

Detailed specifications: NTB52N10G, NTB5404NT4G, NTB5405NG, NTB5411NT4G, NTB5412NT4G, NTB5426NT4G, NTB5605PG, NTB5860N, AO3400A, NTB60N06G, NTB60N06L, NTB6410ANG, NTB6411ANG, NTB6412ANG, NTB6413ANG, NTB65N02R, NTB65N02RT4