NTB60N06G Datasheet and Replacement
Type Designator: NTB60N06G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 180.7 nS
Cossⓘ - Output Capacitance: 660 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: D2PAK
NTB60N06G substitution
NTB60N06G Datasheet (PDF)
ntb60n06g ntp60n06 ntp60n06 ntb60n06.pdf

NTP60N06, NTB60N06Power MOSFET60 V, 60 A, N-ChannelTO-220 and D2PAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.60 VOLTS, 60 AMPERESFeaturesRDS(on) = 14 mW Pb-Free Packages are AvailableN-ChannelDTypical Applications Power Supplies Converters Pow
ntb60n06g.pdf

NTB60N06Gwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Sourc
ntb60n06l ntp60n06l ntp60n06l ntb60n06l.pdf

NTP60N06L, NTB60N06LPower MOSFET60 Amps, 60 Volts,Logic LevelN-Channel TO-220 and D2PAKhttp://onsemi.comDesigned for low voltage, high speed switching applications in60 AMPERES, 60 VOLTSpower supplies, converters, power motor controls and bridge circuits.RDS(on) = 16 mWFeaturesN-Channel Pb-Free Packages are AvailableDTypical Applications Power Supplies C
Datasheet: NTB5404NT4G , NTB5405NG , NTB5411NT4G , NTB5412NT4G , NTB5426NT4G , NTB5605PG , NTB5860N , NTB5860NL , IRF730 , NTB60N06L , NTB6410ANG , NTB6411ANG , NTB6412ANG , NTB6413ANG , NTB65N02R , NTB65N02RT4 , NTB75N03-006 .
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