All MOSFET. NTD110N02RG Datasheet

 

NTD110N02RG MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD110N02RG
   Marking Code: T110N2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 23.6 nC
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 1105 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm
   Package: DPAK

 NTD110N02RG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD110N02RG Datasheet (PDF)

 ..1. Size:131K  onsemi
 ntd110n02rg std110n02rt4g.pdf

NTD110N02RG NTD110N02RG

NTD110N02R, STD110N02RPower MOSFET24 V, 110 A, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losshttp://onsemi.com Low Ciss to Minimize Driver LossV(BR)DSS RDS(on) TYP ID MAX Low Gate Charge24 V 4.1 mW @ 10 V 110 A Optimized for High Side Switching Requirements inHigh-Efficiency DC-DC Converter

 4.1. Size:68K  onsemi
 ntd110n02r.pdf

NTD110N02RG NTD110N02RG

NTD110N02RPower MOSFET24 V, 110 A, N-Channel DPAKFeatures Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Losshttp://onsemi.com Low Ciss to Minimize Driver Loss Low Gate Charge V(BR)DSS RDS(on) TYP ID MAX Optimized for High Side Switching Requirements in24 V 4.1 mW @ 10 V 110 AHigh-Efficiency DC-DC Converters Pb-Fre

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: IXTP8N50MB

 

 
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