All MOSFET. NTD12N10T4 Datasheet

 

NTD12N10T4 Datasheet and Replacement


   Type Designator: NTD12N10T4
   Marking Code: T12N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
   Package: DPAK
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NTD12N10T4 Datasheet (PDF)

 ..1. Size:155K  onsemi
 ntd12n10g ntd12n10t4.pdf pdf_icon

NTD12N10T4

NTD12N10Power MOSFET12 Amps, 100 VoltsN-Channel Enhancement-Mode DPAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a DiscreteV(BR)DSS RDS(on) TYP ID MAXFast Recovery Diode100 V 165 mW @ 10 V 12 A Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Mounting Information Provided for the DPAK Pac

 6.1. Size:158K  onsemi
 ntd12n10.pdf pdf_icon

NTD12N10T4

NTD12N10Power MOSFET12 Amps, 100 VoltsN-Channel Enhancement-Mode DPAKhttp://onsemi.comFeatures Source-to-Drain Diode Recovery Time Comparable to a DiscreteV(BR)DSS RDS(on) TYP ID MAXFast Recovery Diode100 V 165 mW @ 10 V 12 A Avalanche Energy Specified IDSS and RDS(on) Specified at Elevated TemperatureN-Channel Mounting Information Provided for the DPAK Pac

 6.2. Size:867K  cn vbsemi
 ntd12n10-1g.pdf pdf_icon

NTD12N10T4

NTD12N10-1Gwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwi

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