All MOSFET. NTD18N06T4G Datasheet

 

NTD18N06T4G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD18N06T4G
   Marking Code: 18N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 15.3 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 162 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: DPAK

 NTD18N06T4G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD18N06T4G Datasheet (PDF)

 ..1. Size:162K  onsemi
 ntd18n06 ntd18n06t4g ntd18n06 ntd18n06g.pdf

NTD18N06T4G NTD18N06T4G

NTD18N06Power MOSFET18 Amps, 60 VoltsN-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures60 V 51 mW 18 A Pb-Free Packages are AvailableN-ChannelTypical ApplicationsD Power Supplies Converters Power Motor

 6.1. Size:156K  onsemi
 ntd18n06lg ntdv18n06lt4g.pdf

NTD18N06T4G NTD18N06T4G

NTD18N06L, NTDV18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L18 A These Devices are Pb-Free and are RoHS Compliant60 V 54 mW@5.0 V(Note 1)

 6.2. Size:86K  onsemi
 ntd18n06l ntdv18n06l.pdf

NTD18N06T4G NTD18N06T4G

NTD18N06L, NTDV18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.www.onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L18 A These Devices are Pb-Free and are RoHS Compliant60 V 54 mW@5.0 V(Note 1)T

 6.3. Size:121K  onsemi
 ntd18n06l.pdf

NTD18N06T4G NTD18N06T4G

NTD18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX These are Pb-Free Devices18 A60 V 54 mW@5.0 VTypical Applications (Note 1) Power SuppliesN-Channel Converters

 6.4. Size:271K  inchange semiconductor
 ntd18n06l.pdf

NTD18N06T4G NTD18N06T4G

isc N-Channel MOSFET Transistor NTD18N06LFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: FMI80N10T2 | ZXMP3A17E6TA | 2SK2848 | FDP6030L | AON3402

 

 
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