Справочник MOSFET. NTD18N06T4G

 

NTD18N06T4G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTD18N06T4G
   Маркировка: 18N06
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 55 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 15.3 nC
   trⓘ - Время нарастания: 23 ns
   Cossⓘ - Выходная емкость: 162 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.06 Ohm
   Тип корпуса: DPAK

 Аналог (замена) для NTD18N06T4G

 

 

NTD18N06T4G Datasheet (PDF)

 ..1. Size:162K  onsemi
 ntd18n06 ntd18n06t4g ntd18n06 ntd18n06g.pdf

NTD18N06T4G NTD18N06T4G

NTD18N06Power MOSFET18 Amps, 60 VoltsN-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.V(BR)DSS RDS(on) TYP ID MAXFeatures60 V 51 mW 18 A Pb-Free Packages are AvailableN-ChannelTypical ApplicationsD Power Supplies Converters Power Motor

 6.1. Size:156K  onsemi
 ntd18n06lg ntdv18n06lt4g.pdf

NTD18N06T4G NTD18N06T4G

NTD18N06L, NTDV18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L18 A These Devices are Pb-Free and are RoHS Compliant60 V 54 mW@5.0 V(Note 1)

 6.2. Size:86K  onsemi
 ntd18n06l ntdv18n06l.pdf

NTD18N06T4G NTD18N06T4G

NTD18N06L, NTDV18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.www.onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX AEC Q101 Qualified - NTDV18N06L18 A These Devices are Pb-Free and are RoHS Compliant60 V 54 mW@5.0 V(Note 1)T

 6.3. Size:121K  onsemi
 ntd18n06l.pdf

NTD18N06T4G NTD18N06T4G

NTD18N06LPower MOSFET18 A, 60 V, Logic Level N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX These are Pb-Free Devices18 A60 V 54 mW@5.0 VTypical Applications (Note 1) Power SuppliesN-Channel Converters

 6.4. Size:271K  inchange semiconductor
 ntd18n06l.pdf

NTD18N06T4G NTD18N06T4G

isc N-Channel MOSFET Transistor NTD18N06LFEATURESDrain Current : I = 18A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

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