NTD23N03R PDF and Equivalents Search

 

NTD23N03R Specs and Replacement

Type Designator: NTD23N03R

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 22.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.9 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: DPAK

NTD23N03R substitution

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NTD23N03R datasheet

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NTD23N03R

NTD23N03R Power MOSFET 23 A, 25 V, N-Channel DPAK Features Planar HD3e Process for Fast Switching Performance http //onsemi.com Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss V(BR)DSS RDS(on) TYP ID MAX Low Gate Charge 25 V 32 mW 23 A Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters N-CHANNEL Pb-Free... See More ⇒

Detailed specifications: NTD20N06-001, NTD20N06-1G, NTD20N06G, NTD20N06LG, NTD20P06L-001, NTD20P06L-1G, NTD20P06LG, NTD20P06LT4G, AO3400, NTD24N06-001, NTD24N06G, NTD24N06LG, NTD25P03L1, NTD25P03LRLG, NTD2955-1G, NTD2955G, NTD3055-094-1

Keywords - NTD23N03R MOSFET specs

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