All MOSFET. NTD32N06 Datasheet

 

NTD32N06 Datasheet and Replacement


   Type Designator: NTD32N06
   Marking Code: 32N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 93.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 33 nC
   tr ⓘ - Rise Time: 84 nS
   Cossⓘ - Output Capacitance: 346 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: DPAK
 

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NTD32N06 Datasheet (PDF)

 ..1. Size:66K  onsemi
 ntd32n06-001 ntd32n06 ntd32n06-d.pdf pdf_icon

NTD32N06

NTD32N06Power MOSFET32 Amps, 60 Volts, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeatures Pb-Free Packages are AvailableV(BR)DSS RDS(on) TYP ID MAX Smaller Package than MTB36N06V60 V 26 mW 32 A Lower RDS(on) Lower VDS(on)N-Channel

 0.1. Size:98K  onsemi
 ntd32n06l ntd32n06l ntd32n06lg.pdf pdf_icon

NTD32N06

NTD32N06LPower MOSFET32 Amps, 60 VoltsLogic Level, N-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.VDSS RDS(ON) TYP ID MAXFeatures Smaller Package than MTB30N06VL60 V23.7 mW32 A Lower RDS(on), VDS(on), and Total Gate Charge Lower and Tighter

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , SPP20N60C3 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: STD60NF55L | AUIRF4104S

Keywords - NTD32N06 MOSFET datasheet

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