NTD32N06-001 Datasheet and Replacement
Type Designator: NTD32N06-001
Marking Code: 32N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 93.75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 33 nC
tr ⓘ - Rise Time: 84 nS
Cossⓘ - Output Capacitance: 346 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: DPAK
NTD32N06-001 substitution
NTD32N06-001 Datasheet (PDF)
ntd32n06-001 ntd32n06 ntd32n06-d.pdf
NTD32N06Power MOSFET32 Amps, 60 Volts, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits.http://onsemi.comFeatures Pb-Free Packages are AvailableV(BR)DSS RDS(on) TYP ID MAX Smaller Package than MTB36N06V60 V 26 mW 32 A Lower RDS(on) Lower VDS(on)N-Channel
ntd32n06l ntd32n06l ntd32n06lg.pdf
NTD32N06LPower MOSFET32 Amps, 60 VoltsLogic Level, N-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.VDSS RDS(ON) TYP ID MAXFeatures Smaller Package than MTB30N06VL60 V23.7 mW32 A Lower RDS(on), VDS(on), and Total Gate Charge Lower and Tighter
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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