NTD4302-1G MOSFET Datasheet: N-Ch, 30V, 68A. Full specification with pinout and replacement list

NTD4302-1G Specs and Replacement

Type Designator: NTD4302-1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 68 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 640 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: DPAK

NTD4302-1G substitution

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NTD4302-1G datasheet

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NTD4302 Power MOSFET 68 A, 30 V, N-Channel DPAK Features Ultra Low RDS(on) Higher Efficiency Extending Battery Life http //onsemi.com Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery V(BR)DSS RDS(on) TYP ID MAX Avalanche Energy Specified 30 V 7.8 mW @ 10 V 68 A IDSS Specified at Elevated Temperature DPAK Mounting Information Provided ... See More ⇒

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NTD4302 MOSFET Power, N-Channel, DPAK/IPAK 68 A, 30 V Features http //onsemi.com Ultra Low RDS(on) Higher Efficiency Extending Battery Life V(BR)DSS RDS(on) TYP ID MAX Logic Level Gate Drive 30 V 7.8 mW @ 10 V 68 A Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified D IDSS Specified at Elevated Temperature DPAK Mounting Information ... See More ⇒

Detailed specifications: NTD32N06-001, NTD32N06L, NTD32N06LG, NTD3808N-1G, NTD3813N-1G, NTD3817N-1G, NTD40N03R-1G, NTD40N03RG, 4435, NTD4804N-1G, NTD4804NA-1G, NTD4805N-1G, NTD4805NT4G, NTD4806N-1G, NTD4809N-1G, NTD4809NA-1G, NTD4809NH-1G