NTD4804N-1G PDF and Equivalents Search

 

NTD4804N-1G Specs and Replacement

Type Designator: NTD4804N-1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 124 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 952 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: DPAK IPAK

NTD4804N-1G substitution

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NTD4804N-1G datasheet

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NTD4804N-1G

NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 30 V 117 ... See More ⇒

 5.1. Size:275K  onsemi
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NTD4804N-1G

NTD4804N Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 4.0 m @10V CPU Power Delivery 30 V 117 A 5.5 m @4.5V DC--DC ... See More ⇒

 6.1. Size:153K  onsemi
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NTD4804N-1G

NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices 4.0 mW @ 10 V 25 V 117 A Applications 5.5 mW @ 4.5 V CPU Power... See More ⇒

 6.2. Size:89K  onsemi
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NTD4804N-1G

NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 30 V 117 A ... See More ⇒

Detailed specifications: NTD32N06L, NTD32N06LG, NTD3808N-1G, NTD3813N-1G, NTD3817N-1G, NTD40N03R-1G, NTD40N03RG, NTD4302-1G, SPP20N60C3, NTD4804NA-1G, NTD4805N-1G, NTD4805NT4G, NTD4806N-1G, NTD4809N-1G, NTD4809NA-1G, NTD4809NH-1G, NTD4810N-1G

Keywords - NTD4804N-1G MOSFET specs

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