NTD4804N-1G Specs and Replacement
Type Designator: NTD4804N-1G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 124 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 952 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
NTD4804N-1G substitution
- MOSFET ⓘ Cross-Reference Search
NTD4804N-1G datasheet
ntd4804n-1g.pdf
NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 30 V 117 ... See More ⇒
ntd4804n-d.pdf
NTD4804N Power MOSFET 30 V, 117 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 4.0 m @10V CPU Power Delivery 30 V 117 A 5.5 m @4.5V DC--DC ... See More ⇒
ntd4804na-1g.pdf
NTD4804NA Advance Information Power MOSFET 25 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices 4.0 mW @ 10 V 25 V 117 A Applications 5.5 mW @ 4.5 V CPU Power... See More ⇒
ntd4804n nvd4804n.pdf
NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 4.0 mW @ 10 V 30 V 117 A ... See More ⇒
Detailed specifications: NTD32N06L, NTD32N06LG, NTD3808N-1G, NTD3813N-1G, NTD3817N-1G, NTD40N03R-1G, NTD40N03RG, NTD4302-1G, SPP20N60C3, NTD4804NA-1G, NTD4805N-1G, NTD4805NT4G, NTD4806N-1G, NTD4809N-1G, NTD4809NA-1G, NTD4809NH-1G, NTD4810N-1G
Keywords - NTD4804N-1G MOSFET specs
NTD4804N-1G cross reference
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NTD4804N-1G replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: CRTT029N06N | MS8N60
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