NTD4804N-1G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: NTD4804N-1G
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 107 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 124 A
Tjⓘ - Максимальная температура канала: 175 °C
trⓘ - Время нарастания: 20 ns
Cossⓘ - Выходная емкость: 952 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.004 Ohm
Тип корпуса: DPAK IPAK
- подбор MOSFET транзистора по параметрам
NTD4804N-1G Datasheet (PDF)
ntd4804n-1g.pdf

NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117
ntd4804n-d.pdf

NTD4804NPower MOSFET30 V, 117 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications4.0 m @10V CPU Power Delivery30 V 117 A5.5 m @4.5V DC--DC
ntd4804na-1g.pdf

NTD4804NAAdvance InformationPower MOSFET25 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices4.0 mW @ 10 V25 V 117 AApplications5.5 mW @ 4.5 V CPU Power
ntd4804n nvd4804n.pdf

NTD4804N, NVD4804NPower MOSFET30 V, 117 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4804NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant4.0 mW @ 10 V30 V 117 A
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: APQ4ESN65AF | IRFU9120NPBF | BFC60 | STB16NM50N | AO4812 | SIA923EDJ | CS7N60CP
History: APQ4ESN65AF | IRFU9120NPBF | BFC60 | STB16NM50N | AO4812 | SIA923EDJ | CS7N60CP



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