NTD4809N-1G PDF and Equivalents Search

 

NTD4809N-1G Specs and Replacement

Type Designator: NTD4809N-1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 58 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.3 nS

Cossⓘ - Output Capacitance: 315 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DPAK IPAK

NTD4809N-1G substitution

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NTD4809N-1G datasheet

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NTD4809N-1G

NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 mW @ 10 V CPU Power Delivery 30 V 58 A 14 mW @ 4.5 V DC-DC Conv... See More ⇒

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NTD4809N-1G

NTD4809N Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 m @10V CPU Power Delivery 30 V 58 A 14 m @4.5 V DC--DC Co... See More ⇒

 6.1. Size:117K  onsemi
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NTD4809N-1G

NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 9.0 mW @ 10 V 30 V 58 A ... See More ⇒

 6.2. Size:330K  onsemi
 ntd4809nhg.pdf pdf_icon

NTD4809N-1G

NTD4809NH Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 9.0 m @10V 30 V 58 A CPU Power Delivery 12.5 m @4.5 V DC--DC... See More ⇒

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Detailed specifications: NTD40N03R-1G, NTD40N03RG, NTD4302-1G, NTD4804N-1G, NTD4804NA-1G, NTD4805N-1G, NTD4805NT4G, NTD4806N-1G, 12N60, NTD4809NA-1G, NTD4809NH-1G, NTD4810N-1G, NTD4810NH-1G, NTD4813N-1G, NTD4813NH-1G, NTD4815N-1G, NTD4815NH-1G

Keywords - NTD4809N-1G MOSFET specs

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