NTD4809N-1G - параметры транзистора MOSFET, его аналоги, datasheet

NTD4809N-1G Datasheet (PDF)

..1. Size:150K onsemi
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NTD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 mW @ 10 V CPU Power Delivery30 V 58 A14 mW @ 4.5 V DC-DC Conv

5.1. Size:270K onsemi
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NTD4809NPower MOSFET30 V, 58 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 m @10V CPU Power Delivery30 V 58 A14 m @4.5 V DC--DC Co

6.1. Size:117K onsemi
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NTD4809N, NVD4809NPower MOSFET30 V, 58 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified - NVD4809NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant9.0 mW @ 10 V30 V 58 A

6.2. Size:330K onsemi
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NTD4809NHPower MOSFET30 V, 58 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb--Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 m @10V30 V 58 A CPU Power Delivery12.5 m @4.5 V DC--DC