All MOSFET. NTD4815N-1G Datasheet

 

NTD4815N-1G Datasheet and Replacement


   Type Designator: NTD4815N-1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 21.4 nS
   Cossⓘ - Output Capacitance: 181 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: DPAK IPAK
      - MOSFET Cross-Reference Search

 

NTD4815N-1G Datasheet (PDF)

 ..1. Size:153K  onsemi
ntd4815n-1g ntd4815nt4g.pdf pdf_icon

NTD4815N-1G

NTD4815N, NVD4815NPower MOSFET30 V, 35 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4815NV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant15 mW @

 6.1. Size:290K  onsemi
ntd4815nh-1g ntd4815nh-d.pdf pdf_icon

NTD4815N-1G

NTD4815NHPower MOSFET30 V, 35 A, Single N--Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RGV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices15 m @10V30 V35 AApplications27.7 m @4.5 V CPU Power Delivery

 6.2. Size:125K  onsemi
ntd4815n.pdf pdf_icon

NTD4815N-1G

NTD4815NPower MOSFET30 V, 35 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications 15 mW @ 10 V30 V35 A CPU Power Delivery25 mW @ 4.5 V DC-DC Conve

 8.1. Size:148K  onsemi
ntd4810n-1g nvd4810n.pdf pdf_icon

NTD4815N-1G

NTD4810N, NVD4810NPower MOSFET30 V, 54 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4810NV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant10 mW @

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPB22N03S4L-15 | LSC65R280HT | 2SK3700

Keywords - NTD4815N-1G MOSFET datasheet

 NTD4815N-1G cross reference
 NTD4815N-1G equivalent finder
 NTD4815N-1G lookup
 NTD4815N-1G substitution
 NTD4815N-1G replacement

 

 
Back to Top

 


 
.