NTD4815N-1G. Аналоги и основные параметры
Наименование производителя: NTD4815N-1G
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 32.6 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 21.4 ns
Cossⓘ - Выходная емкость: 181 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.015 Ohm
Аналог (замена) для NTD4815N-1G
- подборⓘ MOSFET транзистора по параметрам
NTD4815N-1G даташит
ntd4815n-1g ntd4815nt4g.pdf
NTD4815N, NVD4815N Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4815N V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 15 mW @
ntd4815nh-1g ntd4815nh-d.pdf
NTD4815NH Power MOSFET 30 V, 35 A, Single N--Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Low RG V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 15 m @10V 30 V 35 A Applications 27.7 m @4.5 V CPU Power Delivery
ntd4815n.pdf
NTD4815N Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(ON) MAX ID MAX Applications 15 mW @ 10 V 30 V 35 A CPU Power Delivery 25 mW @ 4.5 V DC-DC Conve
ntd4810n-1g nvd4810n.pdf
NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses AEC-Q101 Qualified and PPAP Capable - NVD4810N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 10 mW @
Другие MOSFET... NTD4806N-1G , NTD4809N-1G , NTD4809NA-1G , NTD4809NH-1G , NTD4810N-1G , NTD4810NH-1G , NTD4813N-1G , NTD4813NH-1G , NCEP15T14 , NTD4815NH-1G , NTD4815NT4G , NTD4854N-1G , NTD4855N-1G , NTD4856N-1G , NTD4857N-1G , NTD4858N-1G , NTD4860N-1G .
History: BUK9775-55A | APM4320K
History: BUK9775-55A | APM4320K
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