All MOSFET. NTD4909N-1G Datasheet

 

NTD4909N-1G MOSFET. Datasheet pdf. Equivalent


   Type Designator: NTD4909N-1G
   Marking Code: 4909N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 29.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 41 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 7.6 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 487 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: DPAK IPAK

 NTD4909N-1G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

NTD4909N-1G Datasheet (PDF)

 ..1. Size:138K  onsemi
 ntd4909n-1g ntd4909n.pdf

NTD4909N-1G NTD4909N-1G

NTD4909NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications8.0 mW @ 10 V CPU Power Delivery30 V 41 A12 mW @ 4.5 V DC-DC Conv

 6.1. Size:137K  onsemi
 ntd4909n.pdf

NTD4909N-1G NTD4909N-1G

NTD4909NMOSFET Power, Single,N-Channel, DPAK/IPAK30 V, 41 AFeatures Low RDS(on) to Minimize Conduction Losses http://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices8.0 mW @ 10 V30 V 41 A12 mW @ 4.5 VApplications CPU Power DeliveryD DC-

 8.1. Size:86K  onsemi
 ntd4904n.pdf

NTD4909N-1G NTD4909N-1G

NTD4904NPower MOSFET30 V, 79 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications 3.7 mW @ 10 V30 V 79 A5.5 mW @ 4.5 V CPU Power Delivery DC-DC Conv

 8.2. Size:123K  onsemi
 ntd4906n.pdf

NTD4909N-1G NTD4909N-1G

NTD4906NPower MOSFET30 V, 54 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications5.5 mW @ 10 V CPU Power Delivery30 V 54 A8.0 mW @ 4.5 V DC-DC Con

 8.3. Size:141K  onsemi
 ntd4904n-1g ntd4904n.pdf

NTD4909N-1G NTD4909N-1G

NTD4904NPower MOSFET30 V, 79 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications 3.7 mW @ 10 V30 V 79 A5.5 mW @ 4.5 V CPU Power Delivery DC-DC Conv

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