NTD4909N-1G PDF and Equivalents Search

 

NTD4909N-1G Specs and Replacement

Type Designator: NTD4909N-1G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 29.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 41 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 487 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: DPAK IPAK

NTD4909N-1G substitution

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NTD4909N-1G datasheet

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 ntd4909n-1g ntd4909n.pdf pdf_icon

NTD4909N-1G

NTD4909N Power MOSFET 30 V, 41 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 8.0 mW @ 10 V CPU Power Delivery 30 V 41 A 12 mW @ 4.5 V DC-DC Conv... See More ⇒

 6.1. Size:137K  onsemi
 ntd4909n.pdf pdf_icon

NTD4909N-1G

NTD4909N MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 41 A Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices 8.0 mW @ 10 V 30 V 41 A 12 mW @ 4.5 V Applications CPU Power Delivery D DC-... See More ⇒

 8.1. Size:86K  onsemi
 ntd4904n.pdf pdf_icon

NTD4909N-1G

NTD4904N Power MOSFET 30 V, 79 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 3.7 mW @ 10 V 30 V 79 A 5.5 mW @ 4.5 V CPU Power Delivery DC-DC Conv... See More ⇒

 8.2. Size:123K  onsemi
 ntd4906n.pdf pdf_icon

NTD4909N-1G

NTD4906N Power MOSFET 30 V, 54 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 5.5 mW @ 10 V CPU Power Delivery 30 V 54 A 8.0 mW @ 4.5 V DC-DC Con... See More ⇒

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Detailed specifications: NTD4855N-1G, NTD4856N-1G, NTD4857N-1G, NTD4858N-1G, NTD4860N-1G, NTD4863N-1G, NTD4865N-1G, NTD4904N-1G, 5N60, NTD4910N-1G, NTD4960N-1G, NTD4963N-1G, NTD4965N-1G, NTD4969N-1G, NTD4970N-1G, NTD50N03R, NTD5406NG

Keywords - NTD4909N-1G MOSFET specs

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