All MOSFET. NTD4963N-1G Datasheet

 

NTD4963N-1G Datasheet and Replacement


   Type Designator: NTD4963N-1G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0096 Ohm
   Package: DPAK IPAK
 

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NTD4963N-1G Datasheet (PDF)

 ..1. Size:115K  onsemi
 ntd4963n-1g.pdf pdf_icon

NTD4963N-1G

NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl

 6.1. Size:123K  1
 ntd4963ng.pdf pdf_icon

NTD4963N-1G

NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.6

 6.2. Size:139K  onsemi
 ntd4963n.pdf pdf_icon

NTD4963N-1G

NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl

 8.1. Size:118K  onsemi
 ntd4969n-d.pdf pdf_icon

NTD4963N-1G

NTD4969NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.0

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Datasheet: NTD4858N-1G , NTD4860N-1G , NTD4863N-1G , NTD4865N-1G , NTD4904N-1G , NTD4909N-1G , NTD4910N-1G , NTD4960N-1G , 7N60 , NTD4965N-1G , NTD4969N-1G , NTD4970N-1G , NTD50N03R , NTD5406NG , NTD5407NG , NTD5413NT4G , NTD5414NT4G .

History: 1N60G-T92-K | IXFH60N65X2

Keywords - NTD4963N-1G MOSFET datasheet

 NTD4963N-1G cross reference
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