Справочник MOSFET. NTD4963N-1G

 

NTD4963N-1G Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: NTD4963N-1G
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 35.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 44 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 20 ns
   Cossⓘ - Выходная емкость: 220 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0096 Ohm
   Тип корпуса: DPAK IPAK
 

 Аналог (замена) для NTD4963N-1G

   - подбор ⓘ MOSFET транзистора по параметрам

 

NTD4963N-1G Datasheet (PDF)

 ..1. Size:115K  onsemi
 ntd4963n-1g.pdf pdf_icon

NTD4963N-1G

NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl

 6.1. Size:123K  1
 ntd4963ng.pdf pdf_icon

NTD4963N-1G

NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.6

 6.2. Size:139K  onsemi
 ntd4963n.pdf pdf_icon

NTD4963N-1G

NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl

 8.1. Size:118K  onsemi
 ntd4969n-d.pdf pdf_icon

NTD4963N-1G

NTD4969NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.0

ПОКАЗАТЬ ЕЩЁ

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History: DHS030N88F | DHS030N88E | OSG70R360FSF | DSG041N08NA | BUZ906X4S | DHS045N88D | WNM2030

 

 
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