Справочник MOSFET. NTD4963N-1G

 

NTD4963N-1G MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTD4963N-1G
   Маркировка: 4963N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 35.7 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 2.5 V
   Максимально допустимый постоянный ток стока |Id|: 44 A
   Максимальная температура канала (Tj): 175 °C
   Общий заряд затвора (Qg): 8.1 nC
   Время нарастания (tr): 20 ns
   Выходная емкость (Cd): 220 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0096 Ohm
   Тип корпуса: DPAK IPAK

 Аналог (замена) для NTD4963N-1G

 

 

NTD4963N-1G Datasheet (PDF)

 ..1. Size:115K  onsemi
ntd4963n-1g.pdf

NTD4963N-1G NTD4963N-1G

NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl

 6.1. Size:123K  1
ntd4963ng.pdf

NTD4963N-1G NTD4963N-1G

NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.6

 6.2. Size:139K  onsemi
ntd4963n.pdf

NTD4963N-1G NTD4963N-1G

NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl

 8.1. Size:118K  onsemi
ntd4969n-d.pdf

NTD4963N-1G NTD4963N-1G

NTD4969NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.0

 8.2. Size:114K  onsemi
ntd4969n-1g.pdf

NTD4963N-1G NTD4963N-1G

NTD4969NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.0

 8.3. Size:82K  onsemi
ntd4969n.pdf

NTD4963N-1G NTD4963N-1G

NTD4969NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.0

 8.4. Size:112K  onsemi
ntd4965n-d.pdf

NTD4963N-1G NTD4963N-1G

NTD4965NPower MOSFET30 V, 68 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.7

 8.5. Size:138K  onsemi
ntd4960n-1g.pdf

NTD4963N-1G NTD4963N-1G

NTD4960NPower MOSFET30 V, 55 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS8.0

 8.6. Size:107K  onsemi
ntd4965n-1g.pdf

NTD4963N-1G NTD4963N-1G

NTD4965NPower MOSFET30 V, 68 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.7

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
Back to Top