PK502BA Specs and Replacement
Type Designator: PK502BA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 130 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: PDFN5X6P
PK502BA substitution
- MOSFET ⓘ Cross-Reference Search
PK502BA datasheet
pk502ba.pdf
N-Channel Enhancement Mode PK502BA NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free D D D D D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID2 G 30V 10.5m 41A G. GATE D. DRAIN S. SOURCE #1 S S S G S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage ... See More ⇒
Detailed specifications: 7N60L-A-TF3, 7N60L-B-TF3, DFP50N06, HY3208P, HY3208M, HY3208B, HY3208PS, HY3208PM, MMIS60R580P, SP8M3, SPP80N06S2-09, SPB80N06S2-09, SST4091, SST4092, SST4093, SVF2N65F, TPHR8504PL
Keywords - PK502BA MOSFET specs
PK502BA cross reference
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PK502BA substitution
PK502BA replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: S60N18RN
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