All MOSFET. SPB80N06S2-09 Datasheet

 

SPB80N06S2-09 Datasheet and Replacement


   Type Designator: SPB80N06S2-09
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 29 nS
   Cossⓘ - Output Capacitance: 610 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0091 Ohm
   Package: TO263
 

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SPB80N06S2-09 Datasheet (PDF)

 ..1. Size:516K  infineon
 spb80n06s2-09 spp80n06s2-09.pdf pdf_icon

SPB80N06S2-09

SPP80N06S2-09Preliminary dataSPB80N06S2-09OptiMOS =Power-Transistor===Product SummaryFeatureVDS55 V N-ChannelRDS(on) 9.1 m Enhancement modeID 80 A 175C operating temperatureP-TO263-3-2 P-TO220-3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-09 P-TO220-3-1 Q67060-S60252N0609SPB80N06S2-09 P-TO263-3-2 Q67060-S6027 2N0609Maxi

 2.1. Size:345K  infineon
 spp80n06s2-05 spb80n06s2-05.pdf pdf_icon

SPB80N06S2-09

www.DataSheet4U.com SPP80N06S2-05SPB80N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS 55 V N-ChannelRDS(on) max. SMD version 4.8 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-05 P- TO220 -3-1 Q67040-S42452N0605SPB80N06S2-05

 2.2. Size:419K  infineon
 spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf pdf_icon

SPB80N06S2-09

SPI80N06S2-08SPP80N06S2-08,SPB80N06S2-08OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8 m Enhancement modeID 80 A 175C operating temperatureP- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-08 P- TO220 -3-1 Q67060-S42832N0608SPB80N06S2-08 P- TO263 -

 4.1. Size:311K  infineon
 spp80n06s2l-09 spb80n06s2l-09.pdf pdf_icon

SPB80N06S2-09

SPP80N06S2L-09SPB80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8.5 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-09 P- TO220 -3-1 Q67060-S60312N06L09SPB80N06S2L-09 P- TO263 -3-2

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Datasheet: HY3208P , HY3208M , HY3208B , HY3208PS , HY3208PM , PK502BA , SP8M3 , SPP80N06S2-09 , AO4468 , SST4091 , SST4092 , SST4093 , SVF2N65F , TPHR8504PL , TSF65R300S1 , UFZ24NL-TA3 , UFZ24NL-TM3 .

History: NVMFD020N06C | AFP8452 | HM120N04D | IPD90N04S3-H4

Keywords - SPB80N06S2-09 MOSFET datasheet

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